《High-mobility ultrathin semiconducting films prepared by spin coating》

• 来源专题：绿色印刷—可穿戴电子
• 编译者： 张宗鹏
• 发布时间：2016-04-13
• 原文来源：;http://www.nature.com/nature/journal/v428/n6980/full/nature02389.html

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics1, 2, 3. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication4, 5, 6, 7, 8, 9, 10, 11. Here we demonstrate a technique for spin coating ultrathin (approx50 Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105 A cm-2) and mobilities greater than 10 cm2 V-1 s-1—an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells12, thermoelectrics13 and memory devices14).