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ACCEPTED MANUSCRIPT
Doped SnO2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms
Getaneh Diress Gesesse1, Damien Coutancier2, Mirella Al Katrib3, Frédérique Donsanti3, Muriel Bouttemy4 and Nathanaelle Schneider2
Accepted Manuscript online 24 June 2024
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DOI 10.1088/1361-6528/ad5afd
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Author e-mailsn.schneider@cnrs.fr
Author affiliations1
Institut Photovolta?que d'Ile-de-France, 18 Boulevard Thomas Gobert, Palaiseau, 91120, FRANCE
2
UMR-IPVF, CNRS, 18 boulevard Thomas Gobert, Palaiseau, 91120, FRANCE
3
Institut Photovolta?que d'Ile-de-France, 18 boulevard Thomas Gobert, Palaiseau, 91120, FRANCE
4
Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), 45 avenue des Etats-Unis, Versailles, 78035, FRANCE
ORCID iDsGetaneh Diress Gesesse https://orcid.org/0000-0001-9742-4536Nathanaelle Schneider https://orcid.org/0000-0001-7749-2400
Dates
Received 20 March 2024
Revised 4 June 2024
Accepted 24 June 2024
Accepted Manuscript online 24 June 2024
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10.1088/1361-6528/ad5afd
Abstract
Nb-doped SnO2 (NTO) thin films were synthesized by atomic layer deposition technique at low temperature (100 °C). For an efficient incorporation of the Nb atoms, i.e. fine control of their amount and distribution, various supercycle ratios and precursor pulse sequences were explored. The thin film growth process studied by in-situ QCM revealed that the Nb incorporation is highly impacted by the surface nature as well as the amount of species available at the surface. This was confirmed by the actual concentration of the Nb atom incorporated inside the thin film as determined by XPS. Highly transparent thin films which transmit more than 95% of the AM1.5 global solar irradiance over a wide spectral range (300-1000 nm) were obtained. In addition, the Nb atoms influenced the optical band gap, conduction band, and valence band levels. While SnO2 thin film were too resistive, films tuned to conductive nature upon Nb incorporation with controlled concentration. Optimal incorporation level was found to be <1 at.% of Nb, and carrier concentration reached up 2.5x1018/cm3 for the as-deposited thin films. As a result, the high optical transparency accompanied with tuned electrical property of NTO thin films fabricated by ALD at low temperature paves the way for their integration into temperature-sensitive, nanostructured optoelectrical devices.
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