《Wavelength-tunable sources of entangled photons interfaced with atomic vapours》

  • 来源专题:绿色印刷—LED
  • 编译者: 张宗鹏
  • 发布时间:2016-04-13
  • The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled photons. A single semiconductor quantum dot is one of the most attractive, as it can generate indistinguishable entangled photons deterministically and is compatible with current photonic-integration technologies. However, the lack of control over the energy of the entangled photons is hampering the exploitation of dissimilar quantum dots in protocols requiring the teleportation of quantum entanglement over remote locations. Here we introduce quantum dot-based sources of polarization-entangled photons whose energy can be tuned via three-directional strain engineering without degrading the degree of entanglement of the photon pairs. As a test-bench for quantum communication, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using optoelectronic devices.

  • 原文来源:;http://www.nature.com/ncomms/2016/160127/ncomms10375/full/ncomms10375.html
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  • 《Tunable Excitonic Processes at Organic Heterojunctions》

    • 来源专题:绿色印刷—LED
    • 编译者:张宗鹏
    • 发布时间:2016-04-13
    • Abstract image Nonradiative Auger recombination and radiative exciplex emissions at organic–organic heterojunctions are found to be mediated by the nature of the majority charge carrier. The Auger recombination is dominant when the heterojunction is electron rich, the exciplex emission is dominant when the heterojunction is hole rich, and both Auger recombination and exciplex emission are present when the heterojunction is charge balanced.
  • 《Doped SnO2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms》

    • 来源专题:现代化工
    • 编译者:武春亮
    • 发布时间:2024-06-26
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(2014 - 2018)Waves Random Media (1991 - 2004) Volume number: Issue number (if known): Article or page number: Nanotechnology Purpose-led Publishing is a coalition of three not-for-profit publishers in the field of physical sciences: AIP Publishing, the American Physical Society and IOP Publishing. Together, as publishers that will always put purpose above profit, we have defined a set of industry standards that underpin high-quality, ethical scholarly communications. We are proudly declaring that science is our only shareholder. ACCEPTED MANUSCRIPT Doped SnO2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms Getaneh Diress Gesesse1, Damien Coutancier2, Mirella Al Katrib3, Frédérique Donsanti3, Muriel Bouttemy4 and Nathanaelle Schneider2 Accepted Manuscript online 24 June 2024 ? © 2024 IOP Publishing Ltd What is an Accepted Manuscript? DOI 10.1088/1361-6528/ad5afd Download Accepted Manuscript PDF Figures Skip to each figure in the article Tables Skip to each table in the article References Citations Article data Skip to each data item in the article What is article data? Open science Article metrics Submit Submit to this Journal Permissions Get permission to re-use this article Share this article Article and author information Author e-mailsn.schneider@cnrs.fr Author affiliations1 Institut Photovolta?que d'Ile-de-France, 18 Boulevard Thomas Gobert, Palaiseau, 91120, FRANCE 2 UMR-IPVF, CNRS, 18 boulevard Thomas Gobert, Palaiseau, 91120, FRANCE 3 Institut Photovolta?que d'Ile-de-France, 18 boulevard Thomas Gobert, Palaiseau, 91120, FRANCE 4 Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), 45 avenue des Etats-Unis, Versailles, 78035, FRANCE ORCID iDsGetaneh Diress Gesesse https://orcid.org/0000-0001-9742-4536Nathanaelle Schneider https://orcid.org/0000-0001-7749-2400 Dates Received 20 March 2024 Revised 4 June 2024 Accepted 24 June 2024 Accepted Manuscript online 24 June 2024 Journal RSS Sign up for new issue notifications 10.1088/1361-6528/ad5afd Abstract Nb-doped SnO2 (NTO) thin films were synthesized by atomic layer deposition technique at low temperature (100 °C). For an efficient incorporation of the Nb atoms, i.e. fine control of their amount and distribution, various supercycle ratios and precursor pulse sequences were explored. The thin film growth process studied by in-situ QCM revealed that the Nb incorporation is highly impacted by the surface nature as well as the amount of species available at the surface. This was confirmed by the actual concentration of the Nb atom incorporated inside the thin film as determined by XPS. Highly transparent thin films which transmit more than 95% of the AM1.5 global solar irradiance over a wide spectral range (300-1000 nm) were obtained. In addition, the Nb atoms influenced the optical band gap, conduction band, and valence band levels. While SnO2 thin film were too resistive, films tuned to conductive nature upon Nb incorporation with controlled concentration. Optimal incorporation level was found to be <1 at.% of Nb, and carrier concentration reached up 2.5x1018/cm3 for the as-deposited thin films. As a result, the high optical transparency accompanied with tuned electrical property of NTO thin films fabricated by ALD at low temperature paves the way for their integration into temperature-sensitive, nanostructured optoelectrical devices. Export citation and abstract BibTeX RIS During the embargo period (the 12 month period from the publication of the Version of Record of this article), the Accepted Manuscript is fully protected by copyright and cannot be reused or reposted elsewhere. As the Version of Record of this article is going to be / has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period. 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