《Distinguishing the Charge Trapping Centers in CaF》

• 来源专题：现代化工
• 编译者： 武春亮
• 发布时间：2024-06-19
• 原文来源：https://www.mdpi.com/2079-4991/14/12/1038

The significance of defects or adsorption in CaF
2
-based 2D material MOSFETs is not solely contingent upon the defect energy level; rather, it is also contingent upon the formation energy and transport type of the device. The two tables presented in the article provide a comprehensive demonstration of the impact of defects on performance. Furthermore, this methodology can facilitate the development of a system tool in the future, which will enable the determination of the impact of defects on device performance. Especially worth mentioning is the adsorption of oxygen molecules, which is a more problematic phenomenon than the adsorption of water molecules. To avoid this issue, it is advisable to isolate oxygen as much as possible during device preparation or use objects that do not introduce additional pollution sources to adsorb oxygen. These results mean that the exclusion of adsorbates in device fabrication is as important as growing high-quality channel material to obtain better device performance. The findings of our research can be extrapolated to the significance of different capture centers in a variety of 2D material MOSFETs.