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ACCEPTED MANUSCRIPT
Floating-gate memristor based on a MoS2/h-BN/AuNPs mixed-dimensional heterostructure
Shirong Qin1, Haiming Zhu1, Ziyang Ren1, Yihui Zhai1, Yao Wang1, Mengjuan Liu2, Weien Lai1, Arash Rahimi-Iman1, Sihan Zhao3 and Hui-Zhen Wu4
Accepted Manuscript online 28 June 2024
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DOI 10.1088/1361-6528/ad5cfc
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Author e-mailsqinshrong@163.com
Author affiliations1 physics, Zhejiang University, Zhejiang Province, Hangzhou, Hangzhou, 310058, CHINA
2 Department of Physic, State Key Laboratory for Silicon Materials, Yuhangtang Road no.866, Hangzhou, 310027, CHINA
3 Department of Physic, State Key Laboratory for Silicon Materials, ZheDa Road no.38, Hangzhou, 310027, CHINA
4 Department of Physics, Zhejiang University, Zhejiang 310027, Hangzhou, 310000, CHINA
ORCID iDsShirong Qin https://orcid.org/0000-0002-8081-325XHui-Zhen Wu https://orcid.org/0000-0001-5858-1969
Dates
Received 20 March 2024
Revised 4 June 2024
Accepted 28 June 2024
Accepted Manuscript online 28 June 2024
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10.1088/1361-6528/ad5cfc
Abstract
Memristors have recently received substantial attention because of its promising and unique application scenes emerging in neuromorphic computing which can achieve gains in computation speed by mimicking the topology of brains in electronic circuits. Traditional memristors made of bulk MoO3 and HfO2, etc. suffer from low switching ratio, short durability and poor stability. In this work, a floating-gate memristor is developed based on a mixed-dimensional heterostructure which is comprised of two-dimensional (2D) molybdenum disulfide (MoS2) and 0-dimensional (0D) Au nanoparticles (AuNPs) separated by an insulating hexagonal boron nitride (h-BN) layer, hereafter, MoS2/h-BN/AuNPs. We find that under the modulation of back-gate voltages, the MoS2/h-BN/AuNPs device operates reliably between a high resistance state (HRS) and a low resistance state (LRS) and that it shows multiple stable LRS states, demonstrating high potential of our memristor in application of multibit storage. The modulation effect can be attributed to the electron quantum tunneling between the AuNPs charge-trapping layer and MoS2 channel. Our memristor exhibits excellent durability and stability: the HRS and LRS remain more than 104 s without obvious degradation and the on/off ratio retains > 104 after more than 3000 switching cycles. We also demonstrate frequency-dependent memory properties upon electrical and optical pulse stimuli.
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